Piezo-magnetoelectric effects inp-doped semiconductors

Doped Semiconductors: Role of Disorder

Ferromagnetism in magnetically doped III-V semiconductors.

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all av...

Effects of annealing on the electrical properties of Fe-doped InP

Photon upconversion in degenerately sulfur doped InP nanowires.

Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to h...

Radiation efficiency of heavily doped bulk n-InP semiconductor

Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial transparency of the samples due to the Moss–Burstein effect. Temporal evolution of the transmitted luminescence shows virtually no effect of surface recombination b...